The 2N5551 is a widely used high-voltage, low-current NPN bipolar junction transistor (BJT) packaged in a standard TO-92 case. It handles a collector-emitter voltage up to 160V, a continuous collector current of 600mA, and power dissipation up to 625mW, making it ideal for telephony, audio pre-amplifiers, and switchingKey Specifications:Transistor Polarity: NPNCollector-Emitter Voltage: Max 160 VCollector-Base Voltage: Max 180 VEmitter-Base Voltage: Max 6.0 VContinuous Collector Current: Max 600 mATotal Device Dissipation: Max 625 mW at \(T_A = 25^\circ\text{C}\)DC Current Gain: 80 to 250 (at 10 mA)Current-Gain Bandwidth Product: 100 MHz to 300 MHzPacket of 5.
